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High energy implantation of high10 B and high11 B into -100- silicon in channel and in random

: Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.

Nuclear instruments and methods in physics research, Section A. Accelerators, spectrometers, detectors and associated equipment 80/81 (1993), pp.659-662
ISSN: 0167-5087
ISSN: 0168-9002
Journal Article
Fraunhofer IIS B ( IISB) ()
boron; channeling; high energy; implantation; ion implantation; profile; silicon; simulation

Profiles of boron implants into the (100) direction of silicon and the range straggling for `B were presented.The electronic stopping power was determined and compared to theoretical data.Both, electronic stopping power data sets of TRIM calculations and of the Monte Carlo code by Hobler are too high especially for energies above 2 MeV.Therefore, range calculations will yield too shallow implantation profiles.The isotopic effect of boron on the range distribution reaches values of 5% for energies around 1 MeV and has, therefore, to be considered if exact profile depths have to be achieved.