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  4. High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers
 
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1999
Conference Paper
Title

High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers

Other Title
Hocheffiziente und hochbrillante 980-nm AlGaAs/InGaAs-Diodenlaser
Abstract
High-brightness and high-efficiency laser bars have been fabricated in the AlGaAs/InGaAs material system. The electro-optical conversion efficiency is close to 60 % at 60 W optical power for bars with broad area lasers. Laser bars comprising 25 tapered emitters have been fabricated as well. Their total output power is higher than 25 W and the average beam quality factor M2 of each individual emitter is 2.18 at 10 W total power.
Author(s)
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schmitt, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Conference on Novel Lasers and Devices-Basic Aspects 1999. Proceedings  
Conference
Conference on Novel Lasers and Devices-Basic Aspects 1999  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • diode laser

  • Diodenlaser

  • GaInAs

  • Halbleiterlaser

  • high brightness

  • high efficiency

  • hohe Brillianz

  • hohe Effizienz

  • semiconductor laser

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