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High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures

Hochbrillante trapezförmige Halbleiter-Laser und -Verstärker basierend auf epitaktischen Schichtstrukturen mit niedrigem modalen Gewinn


IEEE Photonics Technology Letters 10 (1998), No.5, pp.654-656 : Ill.
ISSN: 1041-1135
Journal Article
Fraunhofer IAF ()
beam filamentation; high power semiconductor laser; Hochleistungsdiodenlaser; low-modal gain; niedriger modaler Gewinn; Strahlfilamentierung

The dependence of the beam quality of tapered laser oscillators and amplifiers on the modal optical gain is demonstrated experimentally and theoretically for the first time. Tapered devices with high-(HMG) and low-modal gain (LMG) structures are compared in terms of output power and beam quality. At high-output powers the beam quality of LMG devices is by a factor of ten better than the beam quality of high-modal gain devices. The beam quality remains nearly unchanged up to power levels of more than 2-W continuous-wave (CW) where a beam quality factor of M(2)< 3 is achieved for both, tapered laser oscillators and tapered amplifiers.