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Heteroepitaxial diamond growth on (100) silicon

 
: Jiang, X.; Klages, C.-P.

:

Diamond and Related Materials 2 (1993), No.5-7, pp.1112-1113
ISSN: 0925-9635
Diamond Films <3, 1992, Heidelberg>
English
Journal Article, Conference Paper
Fraunhofer IST ()
100 Silicium; 100 silicon; Diamant; diamond; Heteroepitaxie; heteroepitaxy; hydrogen; Methan; methane; microwave plasma CVD; Mikrowellen-Plasma-CVD; Wasserstoff

Abstract
Highly oriented diamond films have been deposited on mirror-polished single crystalline (100) silicon by microwave plasma CVD. The crystallites are grown with their (001) planes parallel to the silicon (001) plane and their (110) directions parallel to silicon (110), as is shown by scanning electron microscopy (SEM) and x-ray diffraction analysis.

: http://publica.fraunhofer.de/documents/PX-16982.html