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Heavy carbon doping in metal-organic vapor phase epitaxy -MOVPE- for GaAs using trimethylarsine

Starke Kohlenstoff-Dotierung in der metallorganischen Gasphasenepitaxie -MOVPE- durch Verwendung von Trimethylarsin
: Neumann, G.; Bachem, K.H.; Lauterbach, T.; Maier, M.

Singer, K.E.:
Gallium arsenide and related compounds 1990. Proceedings
Bristol, 1991 (Institute of Physics - Conference Series 112)
ISBN: 0-85498-048-2
pp.167-172 : Abb.,Lit.
International Symposium on Gallium Arsenide and Related Compounds <17, 1990, Jersey>
Conference Paper
Fraunhofer IAF ()
carbon doping; doping profile; Dotierprofil; hall-effect; Hall-Effekt; hole mobility; Kohlenstoffdotierung; Löcherbeweglichkeit; MOVPE; SIMS; specific resistance; spezifischer Widerstand; trimethylarsine

GaAs layers heavily doped with carbon were grown by MOVPE using trimethylarsine (TMAs) and trimethylgallium (TMGa). SIMS analysis and Hall effect measurements were performed. The carbon concentration is strongly dependent on deposition temperature, the influence of the other growth parameters is weak. The highest doping level of 3x10 high 20 cm high -3 was obtained at 510 degree C yielding a hole concentration of 1x10 high 20 cm high -3 and a resistivity of 10 high -3 Omega cm. A growth interruption of only 2 seconds at the interface between GaAs:C and nominally undoped GaAs is sufficient for a profile abruptness better than 22 A per decade.