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Half micrometer N-MOS technology using X-ray lithography

 
: Huber, H.-L.; Lauer, V.; Bauer, F.; Korec, J.; Balk, P.

ESSDERC '87. 17th European Solid State Device Research Conference. Proceedings
Bologna: Verlag Technoprint, 1987
pp.83-86
European Solid State Device Research Conference (ESSDERC) <17, 1987, Bologna>
English
Conference Paper
Fraunhofer ISIT ()
mask technology; Maskentechnologie; MOSFET; Röntgenlithographie; X-ray lithography

Abstract
MOSFETs with effective channel lengths down to 0.3 mym have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology. (IMT)

: http://publica.fraunhofer.de/documents/PX-16660.html