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Growth kinetics and electrical performance of silicon oxide layer grown by RTP in pure N2O ambient
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1994
Conference Paper
Titel
Growth kinetics and electrical performance of silicon oxide layer grown by RTP in pure N2O ambient
Author(s)
Lange, P.
Hartmannsgruber, E.
Naumann, F.
Hauptwerk
RTP '94. 2nd International Rapid Thermal Processing Conference. Proceedings
Konferenz
International Rapid Thermal Processing Conference 1994
Language
English
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Fraunhofer-Institut für Siliziumtechnologie ISIT