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Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy.

Wachstum und Charakterisierung von ZnSe auf GaAs mittels hot-wall Epitaxie
: As, D.J.; Rothemund, W.; Hingerl, K.; Sitter, H.

Journal of Crystal Growth 101 (1990), pp.180-184 : Abb.,Lit.
ISSN: 0022-0248
Journal Article
Fraunhofer IAF ()
cathodoluminescence; hot-wall epitaxy; Kathodolumineszenz; Röntgenstrahldiffraktometrie; x-ray diffraction; ZnSe/GaAs

ZnSe was grown successfully on (100)GaAs by hot-wall epitaxy. The crystal quality and orientation of the ZnSe layers were studied by X-ray diffraction and cathodoluminescence at room temperature and 17 K. For the first time (111)ZnSe layers on (100)GaAs have been grown. The influence of the preheating procedure of the GaAs substrate, the substrate temperature and of the Zn-to - Se vapour ratio was observed. The (100)-oriented ZnSe layers show very good cathodoluminescence properties at 17 K and at room temperature.