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  4. Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy.
 
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1990
Journal Article
Title

Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy.

Other Title
Wachstum und Charakterisierung von ZnSe auf GaAs mittels hot-wall Epitaxie
Abstract
ZnSe was grown successfully on (100)GaAs by hot-wall epitaxy. The crystal quality and orientation of the ZnSe layers were studied by X-ray diffraction and cathodoluminescence at room temperature and 17 K. For the first time (111)ZnSe layers on (100)GaAs have been grown. The influence of the preheating procedure of the GaAs substrate, the substrate temperature and of the Zn-to - Se vapour ratio was observed. The (100)-oriented ZnSe layers show very good cathodoluminescence properties at 17 K and at room temperature.
Author(s)
As, D.J.
Rothemund, W.
Hingerl, K.
Sitter, H.
Journal
Journal of Crystal Growth  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • cathodoluminescence

  • hot-wall epitaxy

  • Kathodolumineszenz

  • Röntgenstrahldiffraktometrie

  • x-ray diffraction

  • ZnSe/GaAs

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