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Grating-coupler excited interface phonos in GaAs/AlAs superlattices

Gitterkoppler angeregte Grenzflächenphonons n GaAs/AlAs


Solid State Communications 112 (1999), No.7, pp.387-390
ISSN: 0038-1098
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductor; optical measurement; optische Messung; Quantenfilm; quantum wells

The optical phonon modes of short-period GaAs/AlAs superlattices were investigated by means of far-infrared reflection spectroscopy using the grating coupler technique. Grating couplers provide a wavevector transfer parallel to the layers, enabling 0 us to study the in-plane dispersion of the phonon modes in the superlattice structure. The fundamental longitudinal and transverse confined phonons of GaAs and AlAs were detected, For an increasing in-plane wavevector transfer the superlattice phonon modes show dispersion due to interface effects.