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Gold and platinum diffusion. The key to the understanding of intrinsic point defect behaviour in silicon

: Zimmermann, H.; Ryssel, H.

Applied physics. A 55 (1992), pp.121-134
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
Journal Article
Fraunhofer IIS B ( IISB) ()
diffusion of gold and platinum; modelling; point defects; semiconductor; silicon

The study of gold and platinum diffusion is found to allow the separate observation of the intrinsic point defects, i.e., of silicon self-interstitials and of vacancies. The diffusion of gold i float zone (FZ) silicon is found to be dominated by the kick-out mechanism for temperatures of 800 degrees C and higher. The diffusion of platinum in FZ silicon is described by the kick-out mechanism for temperatures above approximately 900 degrees C. Whereas for temperatures below approximately 850 degrees C the dissociative mechanism governs platinum diffusion. As a result of numerical simulations, we suggest a complete and consistent set of parameters which describes the diffusion of platinum in silicon in the temperature range from 700 degrees C to 950 degrees C and the diffusion of gold in the temperature range from 800 degrees C to 1100 degrees C. The generation or recombination of selfinterstitials and vacancies is found to e ineffective at least below 850 degrees C. The concentration of substitutional platinum is determined by the initial concentration of vacancies at diffusion temperatures below 850 c. Platinum diffusion below 850 degrees C can be used to measure vacancy distributions in silicon quantitatively.