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Gds and fT analysis of pseudomorphic MODFETs with gate lengths down to 0.1 mym

Analyse von Gds und fT in pseudomorphen Gatelängen bis 1 mym

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
pp.41-45 : Abb.,Tab.,Lit.
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
Conference Paper
Fraunhofer IAF ()
Ausgangsleitwert; electron velocity; Elektronengeschwindigkeit; HEMT; MODFET; output conductance

Developing circuits for higher frequencies requires not only shorter gate lengths (l sub g), but also proper scaling of the epilayer structure. A common problem with reducing only l sub g is increasing output conductance (g sub ds), thus no f sub max improvement is achieved. To quantify the effect of scaling on MODFET performance a set of pseudomorphic MODFETs with different epilayer structures and gate lengths between 1 mym and 0.1 mym were investigated. A linear dependence of the intrinsic output resistance as a function of aspect ratio was derived. In addition no velocity overshoot was observed when analyzing f sub T l sub g. These results indicate that simple scaling rules can be applied to gate lengths even down to 0.1 mym.