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Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.

Gds-Analyse pseudomorpher MODFETs auf GaAs Substrat mit Gatelängen bis zu 0.1 mym

: Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.

	Univ. Degli Studi di Parma: WOCSDICE 93. 17th European Workshop on Compound Semiconductor Devices and Integrated Circuits Parma, 1993 pp.31-32 : Abb.,Lit.
	European Workshop on Compound Semiconductor Devices and Integrated Circuits <17, 1993, Parma>

	English
	Conference Paper
	Fraunhofer IAF ()
	Ausgangsleitwertanalyse; HEMT; MODFET; output conductance analysis; transistor scaling; Transistorskalierung

Abstract
A set of pseudomorphic MODFETs with different epilayer structures and gate lengths between 1 mym and 0.1 mym was investigated. Functional dependencies wee derived to allow further gate length reduction for ultimate MODFET performance on GaAs.

: http://publica.fraunhofer.de/documents/PX-15778.html