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  4. Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.
 
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1993
Conference Paper
Title

Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.

Other Title
Gds-Analyse pseudomorpher MODFETs auf GaAs Substrat mit Gatelängen bis zu 0.1 mym
Abstract
A set of pseudomorphic MODFETs with different epilayer structures and gate lengths between 1 mym and 0.1 mym was investigated. Functional dependencies wee derived to allow further gate length reduction for ultimate MODFET performance on GaAs.
Author(s)
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tasker, P.J.
Hülsmann, A.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
WOCSDICE 93. 17th European Workshop on Compound Semiconductor Devices and Integrated Circuits  
Conference
European Workshop on Compound Semiconductor Devices and Integrated Circuits 1993  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Ausgangsleitwertanalyse

  • HEMT

  • MODFET

  • output conductance analysis

  • transistor scaling

  • Transistorskalierung

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