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1993
Conference Paper
Title
Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.
Other Title
Gds-Analyse pseudomorpher MODFETs auf GaAs Substrat mit Gatelängen bis zu 0.1 mym
Abstract
A set of pseudomorphic MODFETs with different epilayer structures and gate lengths between 1 mym and 0.1 mym was investigated. Functional dependencies wee derived to allow further gate length reduction for ultimate MODFET performance on GaAs.
Author(s)