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Title
Gassensoranordnung mit FET mit unterbrochenem Gate
Date Issued
1994
Author(s)
Wenker, Dieter
Dobos, Karoly
Patent No
1990-4028062
Abstract
A sensor configuration for the measurement of gas components utilizes an FET (1) with a semiconducting substrate (2), a source (3), a drain (4), an electrically insulating layer (5) and an electrically conducting metal layer having breaks (6) in the form of a gate (7). Between the gate (7) and the insulating layer (5) is a layer (9) affecting sensitivity and having breaks (10) in alignment with the breaks (6). A protective layer (8) is applied to the outer side of the gate (7), said protective layer comprising sorbent material containing a substance which generates ions or dipoles, said sorbent material attracting target molecules of vapours of organic compounds. The material of the top layer (8) fills out the breaks (6, 10).
Language
de
Patenprio
DE 1990-4028062 A: 19900905