Gassensitive MOSFETs with an adsorbing dielectric layer

MOSFETs are widely used elements in the development of gassensors. Besides MOSFETs with palladium for the gate metallization also other structures find attention. In this paper results of the combination of a MOSFET with a gasadsorbing dielectric layer are presented. The material of this layer are heteropolysiloxanes, which were already used for gassensitive interdigital capacitors.