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  4. Gasgemisch und Verfahren zum Trockenaetzen von Metallen, insbesondere Kupfer, bei niedrigen Temperaturen
 
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Patent
Title

Gasgemisch und Verfahren zum Trockenaetzen von Metallen, insbesondere Kupfer, bei niedrigen Temperaturen

Other Title
Gas mixture used in dry etching metals - contains oxygen , neutral ligand, and fluorinated di one, for in situ cleaning of sedimenting reactors and post-cleaning of structured conducting paths.
Abstract
The gas mixture contains oxygen, at least one neutral ligand L and at least one further material HA of formula: X1C(R1)CH2C(R2)X2 (I), where: X1 and X2 = alkyl, optionally substituted by halogen, aryl or organylsilyl; R1 = oxygen or NX3; R2 = oxygen or NX4; and X3 and X4 = hydrogen, halogen, alkyl, optionally substituted by halogen, aryl or organylsilyl. Also claimed is a process for dry etching metals, especially copper, using the above gas mixture. USE - Used for in-situ cleaning sedimenting reactors, and post-cleaning structured conducting paths (claimed). ADVANTAGE - The process can be carried out at low temperature and reduced pressure.
Inventor(s)
Hieber, K.
Kruck, T.
Schober, M.
Ruhl, G.
Link to Espacenet
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=19637194A
Patent Number
1996-19637194
Publication Date
2003
Language
German
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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