Gas mixture used in dry etching metals - contains oxygen , neutral ligand, and fluorinated di one, for in situ cleaning of sedimenting reactors and post-cleaning of structured conducting paths.

Abstract
The gas mixture contains oxygen, at least one neutral ligand L and at least one further material HA of formula: X1C(R1)CH2C(R2)X2 (I), where: X1 and X2 = alkyl, optionally substituted by halogen, aryl or organylsilyl; R1 = oxygen or NX3; R2 = oxygen or NX4; and X3 and X4 = hydrogen, halogen, alkyl, optionally substituted by halogen, aryl or organylsilyl. Also claimed is a process for dry etching metals, especially copper, using the above gas mixture. USE - Used for in-situ cleaning sedimenting reactors, and post-cleaning structured conducting paths (claimed). ADVANTAGE - The process can be carried out at low temperature and reduced pressure.