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A gas discharged based radiation source for EUV-lithography

: Lebert, R.; Bergmann, K.; Schriever, G.; Neff, W.

Hove, L. van den; Rossum, M. van; Ronse, K.:
Micro- and nanoengineering 98 - MNE
Amsterdam: Elsevier, 1999 (Microelectronic engineering 46.1999)
pp.449-452 :Ill., Lit.
International Conference on Micro- and Nanofabrication (MNE) <1998, Louvain/Belgium>
Conference Paper
Fraunhofer ILT ()
EUV-lithographie; lasererzeugtes Plasma; pind plasma; Röntgenstrahlung

A new high repetitive, compact and low cost gas discharge based EUV "lamp" has been studied as an alternative to laser-produced plasmas as EUV sources. First results using oxygen in a fast discharge of electrically stored energy around 1 J lead to a conversion efficiency of about 0. 1 per cent for the emission at 13.0 nm which is suited for the use with Mo/Si-multilayer mirrors. Using Xenon a broadband emission in the investigated wavelength range from 10 nm to 18 nm is observed. With a first version a source with 40 W electrical input power could be demonstrated that emits about 50 mW/(4pisr) around 13 nm at a repetition rate of 150 Hz. No debris and no electrode erosion was observed after more than 10 (exp 7) pulses done up to now. Making use of the remaining optimisation potential this concept seems to be promising to fulfil the requirements of extreme-ultraviolet lithography.