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GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE. Design, fabrication, and device results

OMVPE gezüchtete GaInP/InGaAs/GaAs-MODFET pseudomorpher Struktur mit kompositionsmodulierter Barriere


IEEE transactions on electron devices 43 (1996), No.10, pp.1659-1664
ISSN: 0018-9383
Journal Article
Fraunhofer IAF ()
chemical vapour deposition; GaInP; HEMT; MOCVD; MODFET

Ga(x)In(1-x)P/Ga(y)In(1-y)As/GaAs Modulation Doped Field Effect Transistors (MODFET's) with a pseudomorphic barrier and a pseudomorphic channel were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE). This material system is promising for advanced MODFET's on GaAs for high frequency and power applications, because of the large discontinuity in the conduction band, advantages in the processing and the capability to increase the energy separation between the bottom of the conduction band and Fermi level by compositionally grading the barriers. Record 2-Dimensional Electron Gas (2-DEG) carrier densities of 3.1 - 10(exp 12) cm(exp -2) for single-sided MODFET's were measured. Measured RF power at 10 GHz for 0.25 mu m devices was >= 0.4 W/mm. For the first time cutoff frequencies integral of T and integral of max exceeding 105 and 188 GHz, respectively, were obtained for this material system with 0.1 mu m gate-length MODFET's.