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GaInP/InGaAs MODFETs on GaAs grown by OMVPE for high frequency and power applications

MOCVD GaIP/InGaAs -MODFETs auf GaAs-Substrat für Hochfrequenz- und Leistungsanwendungen
 

International Semiconductor Devices Research Symposium (ISDRS) '95. Proceedings
1995
pp.247-250
International Semiconductor Device Research Symposium <1995, Charlottesville>
English
Conference Paper
Fraunhofer IML ()
GaAs; GaInP; MODFET

Abstract
GaxIn1-xP/InyGa1-yAs/GaAs MODFETs with a pseudomorphic barrier and a pseudomorphic channel were grown by OMVPE. This Al-free material system is the most promising material system for advanced MODFETs on GaAs for high frequency and power applications. Record 2DEG carrier densities of 3.1 10high12 cmhigh-2 for single sided MODFET were measured. 0.25 mym device yield 0.45 W/mm rf power.

: http://publica.fraunhofer.de/documents/PX-15653.html