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GaInP/GaInAs/GaAs-MODFETs with pseudomorphic GaInP barriers, device concept and device properties

GaInP/GaInAs/GaAs-MODFETs mit pseudomorpher GaInP-Barriere, Konzept und Eigenschaften des Bauelementes
 

Hou, H.Q.; Sah, R.E.; Pearton, S.J.; Ren, F.; Wada, K. ; Electrochemical Society -ECS-, Electronics Division; Electrochemical Society -ECS-, Luminescent and Display Materials Division:
Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors 1998. Proceedings
Pennington, NJ: ECS, 1998 (Electrochemical Society. Proceedings 98-2)
ISBN: 1-566-77194-3
pp.501-511
Symposium on Light Emitting Devices for Optoelectronic Applications <1998, San Diego/Calif.>
State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) <28, 1998, San Diego/Calif.>
Electrochemical Society (Meeting) <193, 1998, San Diego/Calif.>
English
Conference Paper
Fraunhofer IAF ()
GaInP/GaInAs/GaAs-MODFET; MOCVD; pseudomorphes GaInP; pseudomorphic GaInP; reliability; Zuverlässigkeit

Abstract
GaInP/GaInAs/GaAs Modulation Doped Field Effect Transistors (MODFET's) with a pseudomorphic channel and a pseudomorphic barrier have been fabricated from layer structures grown on Ga/As substrates by metalorganic chemical vapour deposition MOCVD). Transistors with a gatelength of 1 mu m show drain saturation currents of 570 mA/mm and extrinsic transconductances of 420 mS/mm. Furthermore, a high drain-source breakdown voltage of 16V is achieved from which an output power of 1 W/mm is estimated for class-B operation. Non-passivated devices do not show any degradation when subjected to high temperature operation to 1 50 deg C. Transistors with a gatelength of 0, 1 5 mu m show drain saturation currents of 580 mA/mm and extrinsic transconductances of 660 mS/mm. The devices have excellent RF properties with extrinsic cutoff frequencies of 120 and 295 GHz for f(T), and f(max), respectively. These results demonstrate the great potential of GaInP/GaInAs/GaAs heterostructures for the fabrication of reliable high frequency and high power MODFETs on GaAs substrates.

: http://publica.fraunhofer.de/documents/PX-15652.html