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GaAs readout electronics for particle detectors

GaAs Ausleseelektronik für Teilchendetektoren

: Lauxtermann, S.; Bronner, W.; Runge, K.

	Pelfer, P.G.; Ludwig, J.; Runge, K.; Rupprecht, H.S.: Gallium Arsenide and Related Compounds. Third International Workshop World Scientific, 1995 pp.167-171
	International Workshop Gallium Arsenide and Related Compounds <3, 1995, San Miniato>

	English
	Conference Paper
	Fraunhofer IAF ()
	GaAs; HEMT; low noise amplifier; radiation detection; rauscharmer Verstärker; Strahlendetektion

Abstract
A monolithically integrated GaAs frontend will be presented consisting of a Charge Sensititve Preamplifier (CSP) and a shaper with a time constant of tau(ind M) = 12 ns and an amplification of 43.7 mV/fC into 50 Ohm. The circuit is based on 0.3 micron double pulse doped pseudomorphic HEMT transistors with a maximum f(ind t)(max) = 50 GHz. To demonstate the funcionality of this electronics the diced chip was connected to a 200 micron thick, 1x1 qmm large GaAs pad detector and spectra of Minimum Ionizing Particles (MIP) were recorded. On another chip a binary readout design was investigated based on the concept of a transimpedance amplifier followed by a univibrator. The performance of that chip will also be presented.

: http://publica.fraunhofer.de/documents/PX-15643.html