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  4. GaAs readout electronics for particle detectors
 
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1995
Conference Paper
Title

GaAs readout electronics for particle detectors

Other Title
GaAs Ausleseelektronik für Teilchendetektoren
Abstract
A monolithically integrated GaAs frontend will be presented consisting of a Charge Sensititve Preamplifier (CSP) and a shaper with a time constant of tau(ind M) = 12 ns and an amplification of 43.7 mV/fC into 50 Ohm. The circuit is based on 0.3 micron double pulse doped pseudomorphic HEMT transistors with a maximum f(ind t)(max) = 50 GHz. To demonstate the funcionality of this electronics the diced chip was connected to a 200 micron thick, 1x1 qmm large GaAs pad detector and spectra of Minimum Ionizing Particles (MIP) were recorded. On another chip a binary readout design was investigated based on the concept of a transimpedance amplifier followed by a univibrator. The performance of that chip will also be presented.
Author(s)
Lauxtermann, S.
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Runge, K.
Mainwork
Gallium Arsenide and Related Compounds. Third International Workshop  
Conference
International Workshop Gallium Arsenide and Related Compounds 1995  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • HEMT

  • low noise amplifier

  • radiation detection

  • rauscharmer Verstärker

  • Strahlendetektion

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