Options
1998
Conference Paper
Titel
GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m
Alternative
GaAs-basierte pin-HEMT Photoempfänger für optische Mikrowellen und Millimeterwellenübertragung
Abstract
Pin-photodiodes for a wavelength of 1.55 mu m were monolithically integrated on GaAs with 0.15 mu m gate-length pseudomorphic HEMTs using a linear graded metamorphic InGaAlAs buffer. We designed and manufactured narrowband (10 GHz and 42 GHz) and broadband (40 Gbit/s) photoreceivers using this technology.
Author(s)