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1989
Conference Paper
Title

Frequency dependent CV measurements of GaAs/AlGaAs heterostructures

Other Title
Frequenzabhängige CV-Messungen an GaAs/AlGaAs Heterostrukturen
Abstract
A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.
Author(s)
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Berroth, M.
Bosch, R.
Mainwork
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings  
Conference
European Solid State Device Research Conference 1989  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • charge density profile

  • CV-characteristics

  • GaAs/AlGaAs heterostructure

  • Ladungsdichteprofil

  • parasitärer Leitungskanal

  • parasitic conducting channel

  • S-Parameter

  • S-parameters

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