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Frequency dependent CV measurements of GaAs/AlGaAs heterostructures

Frequenzabhängige CV-Messungen an GaAs/AlGaAs Heterostrukturen
: Hurm, V.; Berroth, M.; Bosch, R.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
pp.619-622 : Abb.,Lit.
European Solid State Device Research Conference <19, 1989, Berlin>
Conference Paper
Fraunhofer IAF ()
charge density profile; CV-characteristics; GaAs/AlGaAs heterostructure; Ladungsdichteprofil; parasitärer Leitungskanal; parasitic conducting channel; S-Parameter; S-parameters

A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.