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1989
Conference Paper
Titel
Frequency dependent CV measurements of GaAs/AlGaAs heterostructures
Alternative
Frequenzabhängige CV-Messungen an GaAs/AlGaAs Heterostrukturen
Abstract
A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.