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Franz-Keldysh oscillations and Wannier-Stark localization in GaAs/AlAs superlattices with single-monolayer AlAs barriers
Franz-Keldysh Oszillationen und Wannier-Stark Lokalisierung in GaAs/AlAs Übergittern mit Einzel-Monolayern AlAs Barrieren
Using photocurrent spectroscopy, we have studied the absorption properties of GaAs/AlAs superlattices with only I-monolayer (ML) and 2-ML-wide AlAs barriers in an electric field F parallel to the growth direction. Wannier-Stark localization of the carrier states takes place at large electric fields, even for the case of I-ML AlAs barriers. In the low- field regime, Franz-Keldysh oscillations are observed at fields up to 60 kV/cm. The oscillation period shows an Fhigh2/3 behavior, as theoretically predicted, and is larger than expected from a one- electron model.