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  4. Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be-delta-doped GaAs
 
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1991
Journal Article
Title

Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be-delta-doped GaAs

Other Title
Fermi-Kanten-Singularität und Bandauffüllungseffekte im Lumineszenzspektrum von Be-Delta-dotiertem GaAs
Abstract
Photoluminescence studies of the quasi-two-dimensional hole gas (2DHG) at a single Be-delta-doped layer in GaAs reveal Fermi-edge enhancement and photoinduced band filling in the lowtemperature emission spectra. Strong radiative recombination is observed of the 2DHG with the photocreated electrons confined by GaAs/Al sub x Ga sub 1-x As heterointerfaces placed at both sides of the doping spike. For optical excitation with a sufficiently large penetration depth to generate electrons on both sides of the doping spike, a filling of the valence subbands with photocreated holes is found for excitation power densities exceeding a certain thereshold. Excitation with light generating electrons only at the near-surface side of the doping spike does not lead to such band filling, but yields luminescence spectra which show a strong enhancement in intensity at the Fermi edge. The observation of a Fermi-edge singularity is indicative for non-k-conserving recombination of electrons weakly localized at the topmost heterointerface.
Author(s)
Ruiz, A.
Ploog, K.
Wagner, J.
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.43.12134
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • delta-doping

  • Delta-Dotierung

  • Fermi-edge singularity

  • Fermi-Kanten-Singularität

  • GaAs

  • photoluminescence

  • Photolumineszenz

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