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Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithography

Herstellung von pseudomorphen modulationsdotierten Feldeffekttransistoren mit hoher Durchbruchspannung unter Verwendung einer doppelt trockengeätzten Gate-Recess Technologie in Kombination mit E-Beam T-Gate Litographie


Japanese Journal of Applied Physics. Part 1, Regular papers, short notes and review papers 33 (1994), No.12B, pp.7194-7198
ISSN: 0021-4922
Journal Article
Fraunhofer IAF ()
breakdown voltage; Durchbruchspannung; Gate-recess; pseudomorphe MODFET; pseudomorphic MODFET; T-gate

We have developed a technology to fabricate pseudomorphic 0.3micrometer gatelength modulation doped field-effect transistors (MODFETs ) having a brakdown voltage up to 20 Volts. This technology uses mmolecular beam epitaxy (MBE) to grow the InGaAs/AlGaAs/GaAs heterostructure with two pulse doping layers on 3 inch semiisolating GaAs wafers. A mix and match lithography was applied using an i-line stepper and an eledtron beam diect write process to define the mushroom shaped gates (T-gates). The breakdown enhancement is achieved by a self aligned selective double dry etched gate recess using AlGaAs etch stop layers. We investigated the heterostructure doping and influence of the gate recess process to the device performance.