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1987
Journal Article
Titel
Fabrication of halfmicron MOSFETs by means of X-ray lithography
Abstract
MOSFETs with effective channel lengths down to 0.3 mym have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology. (IMT)