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Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures

Herstellung von Spiegeln für die GaAs- and InP-Laser durch Trockenätztechnik bei tiefen Temperaturen


Journal of Electronic Materials 25 (1996), No.9, pp.1446-1450
ISSN: 0361-5235
ISSN: 1543-186X
Journal Article
Fraunhofer IAF ()
dry-etched mirror; GaAs-based laser; Halbleiterlaser; ion-beam etching; Ionenstrahlätztechnik; trockengeätzter Spiegel

We have fabricated dry-etched mirrors in high-speed InGaAs/GaAs/AlGaAs pseudomorphic multiple quantum well ridge-waveguide lasers at 60 deg C and in InGaAs/InP bulk lasers at 5 deg C using enhanced chemically assisted ion-beam etching (CAIBE) technique. The technique allows the etching of laser structures with good surface morphology and excellent anisotropy without cold traps in the etching system. Characteristics of the dry-etched facet lasers match those of cleaved devices. The low sample temperatures for etching allowed the use of standard resists as etch masks.