Fabrication of 0.5 mym MOS test devices by application of X-ray lithography at all levels

Functioning 0.5 mym N-MOS test devices have been fabricated by means of X-ray lithography at all four levels. All exposures were carried out with synchrotron radiation of the BESSY storage ring in Berlin. This paper describes the performance of X-ray exposure and the resist system with regard to mask pattern placement accuracy, overlay and linewidth control. A total overlay of about 130 nm (1 sigma) in x and y direction and overall linewidth variation of 23 nm (1 sigma) within a 4 inch wafer on etched poly-Si structures have been achieved. Electrical results of 0.5 mym N-MOS transistors with long channel behaviour up to 3.5 V supply voltage will be shown.