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Fabrication of 0.5 mym MOS test devices by application of X-ray lithography at all levels

 
: Friedrich, D.; Bernt, H.; Windbracke, W.; Zwicker, G.; Huber, H.-L.

Yanof, A.W. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Electron-beam x-ray and ion-beam technlogy. Submicrometer lithographies VIII : 1-3 March 1989, San Jose, California
Bellingham, Wash.: SPIE, 1989 (Proceedings of SPIE 1089)
ISBN: 0-8194-0124-2
Society of Photo-Optical Instrumentation Engineers (Conference) <1989, San Jose/Calif.>
English
Conference Paper
Fraunhofer ISIT ()
lithography; means of X-ray

Abstract
Functioning 0.5 mym N-MOS test devices have been fabricated by means of X-ray lithography at all four levels. All exposures were carried out with synchrotron radiation of the BESSY storage ring in Berlin. This paper describes the performance of X-ray exposure and the resist system with regard to mask pattern placement accuracy, overlay and linewidth control. A total overlay of about 130 nm (1 sigma) in x and y direction and overall linewidth variation of 23 nm (1 sigma) within a 4 inch wafer on etched poly-Si structures have been achieved. Electrical results of 0.5 mym N-MOS transistors with long channel behaviour up to 3.5 V supply voltage will be shown.

: http://publica.fraunhofer.de/documents/PX-13691.html