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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Excitonic structure and spatially indirect recombination in MOCVD-grown GaN/Al(x)Ga(1-x)N heterostructures
Exzitonische Struktur und räumlich indirekte Rekombination in MOCVD GaN/Al(x)Ga(1-x)N Heterostrukturen
| Onabe, K.; Hiramatsu, K.; Itaya, K.; Nakano, Y.:
2nd International Symposium on Blue Laser and Light Emitting Diodes 1998. Proceedings
Chiba, 1998
pp.276-279 : Ill. |
| International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED) <2, 1998, Chiba> |
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| English |
| Conference Paper |
| Fraunhofer IAF () |
| AlGaN; photoluminescence; Photolumineszenz; PL |
Abstract
Recombination paths in GaN/Al(x)Ga(1-x)N (x<0 18) heterostructures on sapphire were studied by temperature and excitation power density dependent photoluminescence. Free and bound AlGaN excitons are identified. A spatially indirect, below band gap emission line shows a strong red shift with increasing Al content. The data provide evidence, that this red shift is caused by a piezoelectric field which forms a two-dimensional electron gas at the GaN/AlGaN interface.