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Excitonic structure and spatially indirect recombination in MOCVD-grown GaN/Al(x)Ga(1-x)N heterostructures

Exzitonische Struktur und räumlich indirekte Rekombination in MOCVD GaN/Al(x)Ga(1-x)N Heterostrukturen
: Kunzer, M.; Kaufmann, U.; Maier, M.; Obloh, H.

Onabe, K.; Hiramatsu, K.; Itaya, K.; Nakano, Y.:
2nd International Symposium on Blue Laser and Light Emitting Diodes 1998. Proceedings
Chiba, 1998
pp.276-279 : Ill.
International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED) <2, 1998, Chiba>
Conference Paper
Fraunhofer IAF ()
AlGaN; photoluminescence; Photolumineszenz; PL

Recombination paths in GaN/Al(x)Ga(1-x)N (x<0 18) heterostructures on sapphire were studied by temperature and excitation power density dependent photoluminescence. Free and bound AlGaN excitons are identified. A spatially indirect, below band gap emission line shows a strong red shift with increasing Al content. The data provide evidence, that this red shift is caused by a piezoelectric field which forms a two-dimensional electron gas at the GaN/AlGaN interface.