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Excitation spectroscopy on silicon using color center lasers - Study of the thermally induced P line -0.767eV- defect
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1985
Conference Paper
Titel
Excitation spectroscopy on silicon using color center lasers - Study of the thermally induced P line -0.767eV- defect
Author(s)
Sauer, R.
Doernen, A.
Wagner, J.
Hauptwerk
Microscopic identification of electronic defects in semiconductors. Symposium
Konferenz
Symposium on Microscopic identification of electronic defects in semiconductors 1985
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
defektes Silizium
Farbzentrumlaser