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Epitaxial diamond thin films on (001) silicon substrates

: Jiang, X.; Klages, C.-P.; Zachai, R.; Hartweg, M.; Füßer, H.-J.

	Applied Physics Letters 62 (1993), No.26, pp.3438-3440 ISSN: 0003-6951 (Print) ISSN: 1077-3118 ISSN: 1931-9401 (online)

	English
	Journal Article
	Fraunhofer IST ()
	001 Silicium; 001 silicon; bias voltage; Biasspannung; Diamant; diamond; Epitaxie; epitaxy; hydrogen; Methan; methane; microwave plasma CVD; Mikrowellen-Plasma-CVD; nucleation; Nukleation; Orientierung; oritation; Wasserstoff

Abstract
Epitaxial (001) diamond films were grown on mirror- polished monocrystalline (001) silicon substrates by microwave plasma chemical vapour deposition from a methane/hydrogen gas mixture. The films were characterized by means of scanning electron microscopy, Raman spectroscopy and X-ray analysis. The results show that the diamond crystallites are oriented to the silicon substrate with both the (001) planes and the (110) directions parallel to the silicon substrate.

: http://publica.fraunhofer.de/documents/PX-12686.html