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Electronic structure of single delta-doped GaAs layers studied by photoluminescence and raman spectroscopy.

Elektronische Struktur einfach delta-dotierter GaAs Schichten untersucht mittels Photolumineszenz und Ramanspektroskopie
 
: Ploog, K.; Wagner, J.

Anastassakis, E.M.; Joannopoulos, J.D.:
20th International Conference on the Physics of Semiconductors 1990
Singapore: World Scientific, 1990
ISBN: 981-02-0539-2
pp.1541-1543 : Abb.,Lit.
International Conference on the Physics of Semiconductors <20, 1990, Thessaloniki>
English
Conference Paper
Fraunhofer IAF ()
delta-doping; Delta-Dotierung; electronic structure; elektronische Struktur; GaAs; optical spectroscopy; optische Spektroskopie

Abstract
Radiative recombination of quasi-two-dimensional electrons with photocreated holes is reported for single silicon delta-doped layers in GaAs. These holes are confined within the potentail induced by the doping spike, which is repulsive for holes, and an Al0.33Ga0.67As/GaAs heterointerface. It is shown by photoluminescence and Raman spectroscopy that the density of carriers created by cw photoexcitation can be made sufficiently high to modify the actual shape of the doping induced potential well.

: http://publica.fraunhofer.de/documents/PX-11715.html