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Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs

 
: Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J.

Engstroem, O.:
18th International Conference on the Physics of Semiconductors 1986
Singapore: World Scientific, 1987
ISBN: 9971-5-0197-X
pp.951-954 : Abb.,Lit.
International Conference on the Physics of Semiconductors <18, 1986, Stockholm>
English
Conference Paper
Fraunhofer IAF ()
Akzeptor; GaAs; Ramanstreuung

Abstract
Ga-rich p-type GaAs has been studied by electronic Raman scattering (ERS) using sub bandgap excitation. Electronic scattering from both levels of the 78 meV/203 meV double acceptor is observed, depending on the position of the Fermi level. The assignment of the Raman lines is confirmed by Fourier transform ir spectroscopy performed on the same samples. (IAF)

: http://publica.fraunhofer.de/documents/PX-11710.html