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Electron tunneling via gamma- and chi-states in GaAs/Al0.35Ga0.65As double quantum well structures

Elektronen-tunneln via Gamma- und Chi-Zustände in GaAs/Al0.35Ga0.65As Doppel-Quantum-Well-Strukturen

Surface Science 229 (1990), pp.195-198 : Abb.,Lit.
ISSN: 0039-6028
Journal Article
Fraunhofer IAF ()
coupled quantum wells; gekoppelte Quantum Wells; III-V Halbleiter; III-V semiconductors; quantum wells; time resolved photoluminescence; tunneling; tunneln; zeitaufgelöste Photolumineszenz

Non-resonant electron tunneling through a 6nm thick Al sub 0.35 Ga sub 0.65 As barrier is investigated by time-resolved photoluminescence. Application of hydrostatic pressure at 5 K reveals that tunneling via virtual X-states is at least 800 times less efficient than via virtual Gamma-states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well into real X-states in the barriers is observed.