Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Electron tunneling via gamma- and chi-states in GaAs/Al0.35Ga0.65As double quantum well structures

Elektronen-tunneln via Gamma- und Chi-Zustände in GaAs/Al0.35Ga0.65As Doppel-Quantum-Well-Strukturen

: Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Reimann, K.; Ploog, K.; Köhler, K.

	Surface Science 229 (1990), pp.195-198 : Abb.,Lit. ISSN: 0039-6028

	English
	Journal Article
	Fraunhofer IAF ()
	coupled quantum wells; gekoppelte Quantum Wells; III-V Halbleiter; III-V semiconductors; quantum wells; time resolved photoluminescence; tunneling; tunneln; zeitaufgelöste Photolumineszenz

Abstract
Non-resonant electron tunneling through a 6nm thick Al sub 0.35 Ga sub 0.65 As barrier is investigated by time-resolved photoluminescence. Application of hydrostatic pressure at 5 K reveals that tunneling via virtual X-states is at least 800 times less efficient than via virtual Gamma-states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well into real X-states in the barriers is observed.

: http://publica.fraunhofer.de/documents/PX-11696.html