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Electron temperature and lifetime mapping of photoexcited carrier in semiinsulating LEC GaAs substrates by photoluminescence

Elektronentemperatur- und Lebensdauertopographie von photoangeregten Ladungsträgern in semiisolierenden LEC GaAs Substraten mittels Photolumineszenz
: Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.

Singer, K.E.:
Gallium arsenide and related compounds 1990. Proceedings
Bristol, 1991 (Institute of Physics - Conference Series 112)
ISBN: 0-85498-048-2
pp.191-196 : Abb.,Lit.
International Symposium on Gallium Arsenide and Related Compounds <17, 1990, Jersey>
Conference Paper
Fraunhofer IAF ()
electron temperature; Elektronentemperatur; GaAs; Lebensdauer; lifetime; PL-topography; PL-topography

The temperature of photoexcited electrons in LEC-grown semi-insulating GaAs is determined by photoluminescence spectroscopy at low temperature. From the electron temperature the carrier lifetime is calculated. We report two-dimensional high resolution (50mym) temperature and lifetime topography of wafers with different annealing history. A strict correlation is found between lifetime and luminescence intensity. The electron temperature and its spatial variation are strongly modified by annealing and are thus useful quality criteria for a quantitative comparison.