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1989
Journal Article
Titel
Electron parametric-resonance measurements of Si-donor-related levels in Al(x)Ga(1-x)As
Alternative
ESR Untersuchungen am Si Donator in Al(x)Ga(1-x)As/Si
Abstract
We report measurements of an EPR signal in indirect-gap Si-doped Alx Ga1-xAs whose intensity increases after illumination at low temperature. The data indicate that this signal comes from a hydrogenic level associated with the X valley of the conduction band. Measurements of the spectral dependence of the enhancement of the EPR signal show that electrons are transferred from the DX level, the lowest-energy state of the Si donor, to this higher-lying state. No other signal which might be associated with the DX level was observed. The results are consistent with a large lattice relaxation model of the DX center but do not, at this time, distinguish between positive- and negative-U models.
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