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Electroluminescence from Gunn domains in GaAs MESFETS as a means for defect detection

Elektrolumineszenz von Gunn Domänen in GaAs MESFETs für Defekt Untersuchungen
: Jantz, W.; Zappe, H.P.

Swaminathan, V. ; Materials Research Society -MRS-:
Degradation mechanisms in III-V compound semiconductor devices andstructures. Symposium
Pittsburgh/Pa., 1990 (Materials Research Society symposia proceedings 184)
ISBN: 1-55899-073-9
pp.33-38 : Abb.,Lit.
Symposium on Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures <1990, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
electrical defects; electroluminescence; elektrischer Defekt; Elektrolumineszenz; Lichtemission; light emission

The emission of visible light from the high-field region near the drain of GaAs/AlGaAs MESFETs has been used to study the quality of fabricated transistors. Inhomogeneities or bright spots in the emission have proven to indicate the presence of defects in the gate/drain spacing or surface contaminants, such as re-deposited gate material. Processing abnormalities of 0.5 mym diameter are easily seen. The time-variation of emission from the brightest spots is characteristic of the formation of microplasmas the location of which will often predict the site of destructive device breakdown.