Options
1996
Conference Paper
Titel
Electrical properties of silicon carbide polytypes
Alternative
Elektrische Eigenschaften von Siliziumkarbid-Polytypen
Abstract
It is demonstrated that SiC can be doped with boron and aluminum by ion implantation. Based on our Hall effect data, an optimal electrical activity of these dopants is reached at annealing temperatures around 1700 deg C. The density of states at SiC/SiO2 interfaces is monitored. A model is proposed assuming carbon as an essential source for the interface states.
Author(s)