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1988
Journal Article
Titel
Electrical characterization of buried layers in silicon.
Alternative
Die Messung elektrischer Eigenschaften von vergrabenen Schichten in Silizium
Abstract
Buried layers of two types are discussed, namely as produced by "external" and "internal" means (ion implantation and formation of a denuded zone, respectively). Results of the following characterization techniques are presented: spreading and sheet resistance, admittance, crosstalk, rectification. Among the admittance measurements, special emphasis is given to the lifetime profile evaluation. It is shown that the performance and the characteristics of a device can be exploited for buried layer characterization. (IAF)