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Electrical characterization of buried layers in silicon.

Die Messung elektrischer Eigenschaften von vergrabenen Schichten in Silizium
: Klausmann, E.; Fahrner, W.R.

Diffusion and defect Data. B, Solid State Phenomena 1/2 (1988), pp.85-114 : Abb.,Lit.
ISSN: 1012-0394
ISSN: 0377-6883
Journal Article
Fraunhofer IAF ()
Dotierungsprofil; Implantationsschadenprofil; Ionen-Implantation; Trägerlebensdauerprofil

Buried layers of two types are discussed, namely as produced by "external" and "internal" means (ion implantation and formation of a denuded zone, respectively). Results of the following characterization techniques are presented: spreading and sheet resistance, admittance, crosstalk, rectification. Among the admittance measurements, special emphasis is given to the lifetime profile evaluation. It is shown that the performance and the characteristics of a device can be exploited for buried layer characterization. (IAF)