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  4. The electrical characteristics of Pb1-xEuxSe homojunctions.
 
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1993
Journal Article
Title

The electrical characteristics of Pb1-xEuxSe homojunctions.

Other Title
Elektrische Eigenschaften von PN-Übergängen in Pb1-xEuxSe
Abstract
The current mechanism of Pbsub1-xEusubxSe diodes prepared by the MBE techique was studied by measuring Rsub0A of diodes with five different europium contents as a function of temperature. Good agreement was obtained between theoretical results and experimental data at high temperatures. At low temperatures, Rsub0A is not dominated by band-to-band tunnelling, but by excess tunnelling. At present, we favour the explanation of trap-assisted tunnelling since Rsub0A is an exponential function of the energy gap. From the theoretical model, a minority carrier lifetime of the order of a nanosecond was derived.
Author(s)
Xu, J.
Halford, B.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Tacke, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Semiconductor Science and Technology  
DOI
10.1088/0268-1242/8/1S/081
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • electrical property

  • elektrische Eigenschaft

  • Halbleiter

  • IV-VI compound

  • IV-VI-Verbindung

  • semiconductor

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