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  4. Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems.
 
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1990
Journal Article
Title

Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems.

Other Title
Elektrische Mikrowellen Absorption für die Charakterisierung von GaAs/AlGaAs Heterostrukturen
Abstract
The use of magnetic-field-dependent microwave absorption as a nondestructive and contact-free means to study transport behavior in GaAs/AlGaAs devices is explored. This technique allows quick measurement of resistance, mobility, and carrier concentration in bulk substrates as well as in the two-dimensional electron gas of heterostructure quantum wells. The two- and three-dimensional conductivities may be separably evaluated, allowing detailed study of conduction in the active layer of high-electron-mobility devices. A brief theoretical foundation is provided, followed by application of the approach to examination of device structural dependencies, carrier-density conduction behavior, and the effects of etch processing on quantum-well integrity.
Author(s)
Jantz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zappe, H.P.
Journal
Journal of applied physics  
DOI
10.1063/1.346874
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Beweglichkeit

  • carrier concentration

  • electric microwave absorption

  • elektrische Mikrowellenabsorption

  • Ladungsträgerdichte

  • mobility

  • resistance

  • transport behaviour in GaAs/AlGaAs

  • Transporteigenschaften in GaAs/AlGaAs

  • Widerstand

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