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Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems.

Elektrische Mikrowellen Absorption für die Charakterisierung von GaAs/AlGaAs Heterostrukturen
: Jantz, W.; Zappe, H.P.


Journal of applied physics 68 (1990), No.12, pp.6309-6314 : Abb.,Tab.,Lit.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
Beweglichkeit; carrier concentration; electric microwave absorption; elektrische Mikrowellenabsorption; Ladungsträgerdichte; mobility; resistance; transport behaviour in GaAs/AlGaAs; Transporteigenschaften in GaAs/AlGaAs; Widerstand

The use of magnetic-field-dependent microwave absorption as a nondestructive and contact-free means to study transport behavior in GaAs/AlGaAs devices is explored. This technique allows quick measurement of resistance, mobility, and carrier concentration in bulk substrates as well as in the two-dimensional electron gas of heterostructure quantum wells. The two- and three-dimensional conductivities may be separably evaluated, allowing detailed study of conduction in the active layer of high-electron-mobility devices. A brief theoretical foundation is provided, followed by application of the approach to examination of device structural dependencies, carrier-density conduction behavior, and the effects of etch processing on quantum-well integrity.