Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.

Effiziente Hochfrequenz-Direktmodulation von p-dotierten In0.35Ga0.65As/GaAs Multiquantum-Well-Lasern

: Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.

DOI: 10.1049/el:19921374

	Electronics Letters 28 (1992), No.23, pp.2141-2142 : Abb.,Lit. ISSN: 0013-5194

	English
	Journal Article
	Fraunhofer IAF ()
	Halbleiterlaser; semiconductor laser

Abstract
The authors demonstrate p-type modulation-doped strained-layer Insub0.35Gasub0.65As/GaAs multiquantum well lasers which achieve a 3 dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50 mA in a simple 3 x 200 My square meter mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.

: http://publica.fraunhofer.de/documents/PX-10730.html