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Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.

Effiziente Hochfrequenz-Direktmodulation von p-dotierten In0.35Ga0.65As/GaAs Multiquantum-Well-Lasern
 

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Electronics Letters 28 (1992), No.23, pp.2141-2142 : Abb.,Lit.
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
Halbleiterlaser; semiconductor laser

Abstract
The authors demonstrate p-type modulation-doped strained-layer Insub0.35Gasub0.65As/GaAs multiquantum well lasers which achieve a 3 dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50 mA in a simple 3 x 200 My square meter mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.

: http://publica.fraunhofer.de/documents/PX-10730.html