Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.

The authors demonstrate p-type modulation-doped strained-layer Insub0.35Gasub0.65As/GaAs multiquantum well lasers which achieve a 3 dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50 mA in a simple 3 x 200 My square meter mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.