English
Deutsch
Log In
Log in with Fraunhofer Smartcard
Password Login
Research Outputs
Fundings & Projects
Researchers
Institutes
Statistics
Fraunhofer-Gesellschaft
Home
Fraunhofer-Gesellschaft
Konferenzschrift
Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs
Details
Full
Export
Statistics
Options
Show all metadata (technical view)
1986
Conference Paper
Title
Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs
Author(s)
Loehnert, K.
Nagel, G.
Wettling, W.
Mainwork
E-MRS Meeting 1986. Proceedings
Conference
European Materials Research Society (Meeting) 1986
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
GaAs
semiisolierende Homogenitaet
Wärmebehandlung