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Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs

 
: Loehnert, K.; Nagel, G.; Wettling, W.

E-MRS Meeting 1986. Proceedings
1986
pp.65-70 : Abb.,Lit.
European Materials Research Society (Meeting) <1986, Strasbourg>
English
Conference Paper
Fraunhofer IAF ()
GaAs; semiisolierende Homogenitaet; Wärmebehandlung

: http://publica.fraunhofer.de/documents/PX-10670.html