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  4. Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs
 
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1986
Conference Paper
Title

Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs

Author(s)
Loehnert, K.
Nagel, G.
Wettling, W.
Mainwork
E-MRS Meeting 1986. Proceedings  
Conference
European Materials Research Society (Meeting) 1986  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • semiisolierende Homogenitaet

  • Wärmebehandlung

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