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Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs
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1986
Conference Paper
Titel
Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs
Author(s)
Loehnert, K.
Nagel, G.
Wettling, W.
Hauptwerk
E-MRS Meeting 1986. Proceedings
Konferenz
European Materials Research Society (Meeting) 1986
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
GaAs
semiisolierende Homogenitaet
Wärmebehandlung