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Effects of different recrystallization processes on the electrical characteristics of underlying MOS devices

 
: Buchner, R.; Panish, P.; Haberger, K.; Seegebrecht, P.

European SOI Workshop
1988
European SOI Workshop <1988, Meylan>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; Laserkristallisation; MOS Transistor; Poly-Silizium; SOI

Abstract
MOS Transistors have been fabricated in two independent active device layers, the second of which has been formed through laser recrystallization of a thin polysilicon layer. The effect of the fabrication process on the devices in the silicon substrate has been investigated and characterized through electrical measurements. (IFT)

: http://publica.fraunhofer.de/documents/PX-10665.html