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Effect of spatial localisation of dopant atoms on the confining potential and electron subband structure in delta-doped GaAs-Si.

Einfluss der räumlichen Lokalisierung von Dotieratomen auf das attraktive Potential und die elektronische Subbandstruktur in delta-dotiertem GaAs-Si
: Richards, D.; Wagner, -; Ramsteiner, M.; Ekenberg, U.; Fasol, G.; Ploog, K.


Surface Science 267 (1992), pp.61-64
ISSN: 0039-6028
Journal Article
Fraunhofer IAF ()
delta-doping; Delta-Dotierung; dopant distribution; Dotierverteilung; GaAs

In conjunction with Raman scattering measurements, we have performed calculations of the electronic structure of nominally Delta-doped GaAs: Si in which the dopant layer has been positioned close (smaller than 300 Angström) to the surface, with a 200 Angström spread towards the surface. The band- bending due to the Fermi level pinning at the surface gives rise to a strong asymmetric shape for the space charge induced potential well. Electron subband energies and wave functions are determined self-consistently and intersubband spin-density energies are compared with electronic Raman scattering results. A comparison of calculated and measured intersubband charge-density excitation energies is also made.