Einfluss der räumlichen Lokalisierung von Dotieratomen auf das attraktive Potential und die elektronische Subbandstruktur in delta-dotiertem GaAs-Si

: Richards, D.; Wagner, -; Ramsteiner, M.; Ekenberg, U.; Fasol, G.; Ploog, K.

Abstract
In conjunction with Raman scattering measurements, we have performed calculations of the electronic structure of nominally Delta-doped GaAs: Si in which the dopant layer has been positioned close (smaller than 300 Angström) to the surface, with a 200 Angström spread towards the surface. The band- bending due to the Fermi level pinning at the surface gives rise to a strong asymmetric shape for the space charge induced potential well. Electron subband energies and wave functions are determined self-consistently and intersubband spin-density energies are compared with electronic Raman scattering results. A comparison of calculated and measured intersubband charge-density excitation energies is also made.