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  4. Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
 
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1987
Journal Article
Title

Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs

Abstract
Raman spectroscopy with optical multichannel detection was used to study Se(+)-ion implanted and neutron-transmutation doped GaAs, both before and after rapid thermal annealing. Samples implanted at room temperature showed an amorphous surface layer, whereas those implanted at 320 degrees C exhibited Raman features of both amorphous and crystalline GaAs. After rapid thermal annealing, the material implanted at elevated temperatures showed a better structural recovery, as indicated by a lower intensity of forbidden phonon scattering. Using resonance Raman effects, we were able to discriminate between amorphous and crystalline features in the spectra. For the neutron-transmutation doped GaAs, the as-irradiated material showed a Raman spectrum similar to the one of undoped crystalline GaAs. The increase in electrical activation with increasing annealing temperature was monitored by Raman scattering from coupled plasmon-phonon modes, giving a carrier concentration comparable to the one obt ained from Hall measurements. (IAF)
Author(s)
Ramsteiner, M.
Haydl, W.H.
Wagner, J.
Journal
Journal of applied physics  
DOI
10.1063/1.337856
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • Ionenimplantation

  • Ramanstreuung

  • thermische Ausheilung

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