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The effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg(1-x)Cd(x)Te

Die Wirkung von ECR-Plasmaätzen mit CH4/H2 auf die elektrischen Eigenschaften von p-Hg(1-x)Cd(x)Te
 

Longshore, R.E. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Infrared detectors for remote sensing. Physics, materials, and devices : 8-9 August 1996, Denver, Colorado
Bellingham/Wash.: SPIE, 1996 (SPIE Proceedings Series 2816)
ISBN: 0-8194-2204-5
pp.98-106
Conference "Infrared Detectors for Remote Sensing - Physics, Materials, and Devices" <1996, Denver/Colo.>
English
Conference Paper
Fraunhofer IAF ()
ECR plasma etching; ECR Plasmaätzen; electrical property; elektrische Eigenschaft; Hg(1-x)Cd(x)Te

Abstract
p-type Hg(1-x)Cd(x)Te epilayers either Hg-vacancy or As doped were etched in CH4/H2 electron cyclotron resonance plasmas and subsequently examined by Hall-effect and thermoelectric measurements with respect to changes of their electrical properties owing to the plasma exposure. The plasma was found to cause conversion from p- to n-type in a subsurface region extending up to 5 mu m into the etched MCT epilayers. The observed type conversion was rather independent of sample temperature (60 to 100 deg C) and bias (0 to -50 V) and insensitive to the microwave power (100 to 250 W) and the exposure time used for the process. Annealing of the samples in sealed quartz ampules under Hg vapor at 150 to 200 deg C reestablished p-type conduction in the type-converted layers. The type conversion and its reversibility are assumed to be correlated with the in- and outdiffusion of atomic hydrogen which presumably neutralizes the acceptors by the formation of complexes which are stable at temperatures T <= 100 deg C.

: http://publica.fraunhofer.de/documents/PX-10577.html