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Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
:
Stolz, W.
; Knecht, J.
;
Ploog, K.
;
Wagner, J.
Solid State Communications 57 (1986), No.10, pp.781-784 : Abb.,Lit.
ISSN: 0038-1098
English
Journal Article
Fraunhofer IAF
(
)
absorption
;
emission
; Excitonen
; GaInAs/AlInAs
;
quantum wells
