English
Deutsch
Log In
Password Login
or
Log in with Fraunhofer Smartcard
Research Outputs
Projects
Researchers
Institutes
Statistics
Fraunhofer-Gesellschaft
Home
Fraunhofer-Gesellschaft
Artikel
Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Details
Full
Export
Statistics
Options
1986
Journal Article
Titel
Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Author(s)
Stolz, W.
Knecht, J.
Ploog, K.
Wagner, J.
Zeitschrift
Solid State Communications
Language
English
google-scholar
View Details
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
absorption
emission
Excitonen
GaInAs/AlInAs
quantum wells