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Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures

 
: Stolz, W.; Knecht, J.; Ploog, K.; Wagner, J.

Solid State Communications 57 (1986), No.10, pp.781-784 : Abb.,Lit.
ISSN: 0038-1098
English
Journal Article
Fraunhofer IAF ()
absorption; emission; Excitonen; GaInAs/AlInAs; quantum wells

: http://publica.fraunhofer.de/documents/PX-10576.html