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Effect of atmosphere on reliability of passivated 0.15 mu m InAlAs/InGaAs HEMTs

Einfluß der Umgebungs-Atmosphäre auf die Zuverlässigkeit passivierter 0.15 Mikrometer AlAs/InGaAs HEMTs

: Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Schmidt, K.H.; Weimann, G.

DOI: 10.1049/el:19981383

	Electronics Letters 34 (1998), No.21, pp.2064-2066 : Ill. ISSN: 0013-5194

	English
	Journal Article
	Fraunhofer IAF ()
	InAlAs/InGaAs HEMT; InP HEMT; reliability; Zuverlässigkeit

Abstract
The influence of ambient atmosphere on the long term stability of InP-based HEMTs has been investigated. By performing accelerated stress tests at elevated temperature the authors found that the electrical parameter drift is much faster in air than in nitrogen.The importance of a stabilisation bake in nitrogen after the fabrication process is demonstrated.