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Edge-phase-shifting lithography for sub 0.3 mu m T-gates

Phasenschiebende Lithographie an Ecken für T-gates unter 0.3 Mikrometer

Fuller, G.E. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optical microlithograpy X
Bellingham, Wash.: SPIE, 1997 (SPIE Proceedings Series 3051)
ISBN: 0-8194-2465-X
pp.295-303 : Ill.
Society of Photo-Optical Instrumentation Engineers (Conference) <1997, Santa Clara/Calif.>
Conference Paper
Fraunhofer IAF ()
HFET; phase-shifting lithography; phasenschiebende Lithographie; T-gate

We have developed an edge-phase-shifting (EPS) lithography for the fabrication of sub 0.3 mu m T-gates using a 5x i-line stepper with a 0.4 numerical aperture lens. Two exposures have to be accurately aligned on each other within 150 nm. The first exposure uses EPS lithography and defines the gate length in a negative resist. The second exposure defines the cross-section of the T-gate. Using this lithography, hetero structure field effect transistors (HFETs) can be fabricated.